Ab InitioIdentification of the Nitrogen Diffusion Mechanism in Silicon
نویسندگان
چکیده
منابع مشابه
Diffusion of implanted nitrogen in silicon
Growth of thinner gate oxides and their thickness control is one of many challenges in scaling technologies today. Nitrogen implantation can be used to control gate oxide thicknesses. This article reports a study on the fundamental behavior of nitrogen diffusion in silicon. Nitrogen was implanted as N2 1 at a dose of 5310 ions/cm at 40 and 200 keV through a 50 Å screen oxide into Czochralski si...
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ژورنال
عنوان ژورنال: Physical Review Letters
سال: 2005
ISSN: 0031-9007,1079-7114
DOI: 10.1103/physrevlett.95.025901